The tables below list the accelerating voltages available in the four operating modes, together with the maximum field sizes and minimum scanning steps. Fields can be stitched together to write a whole wafer using a translation stage. The stage moves in a step-and-repeat mode guided by an optical interferometer. The specified stitching accuarcy is better than 40nm, although the system outperforms this (see section on performance below). The specified minimum linewidth is < 10nm, with 9.8nm being achieved.

JEOL 5500FS e-beam Lithography

e-beam writing times

e-beam mode Accelerating voltage Objective lens Maximum field size
1 25 kV Fourth lens 2mm x 2mm
2 50 kV Fourth lens 1mm x 1mm
3 25 kV Fifth lens 200 μm x 200 μm
4 50 kV Fifth lens

100 μm x 100 μm