The tables below list the accelerating voltages available in the four operating modes, together with the maximum field sizes and minimum scanning steps. Fields can be stitched together to write a whole wafer using a translation stage. The stage moves in a step-and-repeat mode guided by an optical interferometer. The specified stitching accuarcy is better than 40nm, although the system outperforms this (see section on performance below). The specified minimum linewidth is < 10nm, with 9.8nm being achieved.
e-beam writing times